Delta-doped β-gallium oxide field-effect transistor

Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET)

The IGFET or MOSFET is a voltage controlled field effect transistor that differs from a JFET in that it has a “Metal Oxide” Gate electrode which is electrically insulated from the main semiconductor n-channel or p-channel by a very thin layer of insulating material usually silicon dioxide, commonly known as glass. This ultra thin insulated metal gate electrode can be thought of as one plate of ...

Delta-doped AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with high breakdown voltages

Zinc oxide and gallium doped zinc oxide nanowires for optoelectronics

Zinc oxide (ZnO) nanostructures are become an important matter of study since they can be used in nanoscale optoelectronics for applications such as memory storage, logic circuits, solid-state gas-, bioor light-sensors, solar cells, field effect transistors, field effect displays, and short wavelength light emitting diodes. ZnO is a semiconductor with a direct and wide band-gap around 3.4 eV, a...

Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor

Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gatessurrounding the channel that employs el...

Gallium Oxide And Gadolinium Gallium Oxide Insulators On Si δ-Doped GaAs / AlGaAs Heterostructures